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APTGF50DA120TG
Boost chopper NPT IGBT Power Module
VBUS VBUS SENSE NT C2
VCES = 1200V IC = 50A @ Tc = 80C
Application * AC and DC motor control * Switched Mode Power Supplies * Power Factor Correction Features * Non Punch Through (NPT) Fast IGBT(R) - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * Internal thermistor for temperature monitoring * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 75 50 150 20 312 100A @ 1200V Unit V A V W
July, 2006 1-6 APTGF50DA120TG - Rev 2
CR1
OUT Q2 G2
E2
0/VBUS
NT C1
G2 E2
OUT
VBUS
0/VBUS
OUT
VBUS SENSE
E2 G2
NTC2 NTC1
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF50DA120TG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 50A Tj = 125C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 3.7 6.5 100 Unit A V V nA
3.2 4.0 4.5
Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 50A Inductive Switching (25C) VGE = 15V VBus = 600V IC = 50A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 50A RG = 5 VGE = 15V Tj = 125C VBus = 600V IC = 50A Tj = 125C RG = 5
Min
Typ 3450 330 220 330 35 200 35 65 320 30 35 65 360 40 6.9
Max
Unit pF
nC
ns
ns
mJ 3.05
Chopper diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
Test Conditions VR=1200V Tj = 25C Tj = 125C Tc = 70C
Min 1200
Typ
Max 250 500
Unit V A A
Reverse Recovery Time Reverse Recovery Charge
nC
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APTGF50DA120TG - Rev 2
IF = 60A VR = 800V di/dt =200A/s
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
400 470 1200 4000
ns
July, 2006
IF = 60A IF = 120A IF = 60A
Tj = 125C
60 2.0 2.3 1.8
2.5 V
APTGF50DA120TG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.4 0.9 150 125 100 4.7 160 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K Min
Typ 50 3952
Max
Unit k K
RT =
R 25
1 1 RT : Thermistor value at T exp B 25 / 85 T - T 25
T: Thermistor temperature
SP4 Package outline (dimensions in mm)
See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGF50DA120TG - Rev 2
ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS :
July, 2006
APTGF50DA120TG
Typical Performance Curve
200 Ic, Collector Current (A) 160 120 80 40 0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V) 8
TJ=125C
Output characteristics (V GE=15V)
250s Pulse Test < 0.5% Duty cycle T J=25C
50
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle T J=25C
40 30 20
TJ =125C
10 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
4
300
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 50 100 150 200
IC = 50A TJ = 25C VCE=600V
250 200 150 100 50 0 0
250s Pulse Test < 0.5% Duty cycle
VCE =240V
TJ=25C
VCE =960V
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt.
T J = 25C 250s Pulse Test < 0.5% Duty cycle
16
250
300
350
Gate Charge (nC) On state Voltage vs Junction Temperature
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic=25A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=100A Ic=50A
Ic=100A
Ic=50A
Ic=25A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic, DC Collector Current (A)
90 80 70 60 50 40 30 20 10 0
DC Collector Current vs Case Temperature
1.15
-50
-25
0 25 50 75 100 125 150 TC, Case Temperature (C)
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4-6
APTGF50DA120TG - Rev 2
July, 2006
APTGF50DA120TG
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns)
VCE = 600V R G = 5 VGE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
45
400
VGE=15V, TJ=125C
40
350
35
300
VGE=15V, TJ=25C VCE = 600V RG = 5
30
250
25 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
200 0 25 50 75 100 125
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180
VCE = 600V RG = 5
50
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
TJ = 125C
100
VGE=15V
30
TJ = 25C VCE = 600V, VGE = 15V, R G = 5
60
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
20 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
Eon, Turn-On Energy Loss (mJ)
24 20 16 12 8 4 0 0
VCE = 600V R G = 5
TJ=125C, VGE=15V
Eoff, Turn-off Energy Loss (mJ)
28
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
8
VCE = 600V VGE = 15V R G = 5 TJ = 125C
6
4
TJ = 25C
TJ=25C, VGE =15V
2
0 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125
25 50 75 100 ICE, Collector to Emitter Current (A)
125
Switching Energy Losses (mJ)
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 18
8
Switching Energy Losses vs Junction Temp.
VCE = 600V VGE = 15V RG = 5 Eon, 50A
16 14 12 10 8 6 4 2 0 0
VCE = 600V VGE = 15V TJ= 125C Eon, 50A
6
Eoff, 50A Eon, 25A
4
Eoff, 50A Eon, 25A Eoff, 25A
Eoff, 25A
0 10 20 30 40 Gate Resistance (Ohms) 50 0 25 50 75 100 TJ, Junction Temperature (C) 125
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APTGF50DA120TG - Rev 2
2
July, 2006
APTGF50DA120TG
Capacitance vs Collector to Emitter Voltage 10000 C, Capacitance (pF)
Cies
Reverse Bias Safe Operating Area 120 IC , Collector Current (A) 100 80 60 40 20 0 0 400 800 1200 VCE, Collector to Emitter Voltage (V)
1000
Coes
100 0
Cres
10 20 30 40 VCE, Collector to Emitter Voltage (V)
50
0.45 Thermal Impedance (C/W) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.7 0.5 0.9
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds) Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 10 20 30 40 50 IC, Collector Current (A) 60
Hard switching ZCS ZVS VCE = 600V D = 50% RG = 5 TJ = 125C TC= 75C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF50DA120TG - Rev 2
July, 2006

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